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IRFP23N50L 07/18/03 smps mosfet hexfet power mosfet to-247ac features and benefits ?

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v dss r ds(on) typ. trr typ. i d 500v 0.190 ? 170ns 23a absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 23 i d @ t c = 100c continuous drain current, v gs @ 10v 15 a i dm pulsed drain current 92 p d @t c = 25c power dissipation 370 w linear derating factor 2.9 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 14 v/ns t j operating junction and -55 to + 150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) mounting torque, 6-32 or m3 screw diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 23 mosfet symbol (body diode) a showing the i sm pulsed source current ??? ??? 92 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 14a, v gs = 0v t rr reverse recovery time ??? 170 250 ns t j = 25c, i f = 23a ??? 220 330 t j = 125c, di/dt = 100a/s q rr reverse recovery charge ??? 560 840 nc t j = 25c, i s = 23a, v gs = 0v ??? 980 1500 t j = 125c, di/dt = 100a/s i rrm reverse recovery current ??? 7.6 11 a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) 10lb in (1.1n m) www.irf.com 1 pd - 94230b

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 1.5mh, r g = 25 ? , i as = 23a, dv/dt = 14v/ns. (see figure 12). i sd 23a, di/dt 430a/s, v dd v (br)dss , t j 150c. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff.(er) is a fixed capacitance that stores the same energy as c oss while v ds is rising from 0 to 80% v dss . static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 500 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.27 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.190 0.235 ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v i dss drain-to-source leakage current ??? ??? 50 a ??? ??? 2.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 1.2 ??? ? dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 12 ??? ??? s q g total gate charge ??? ??? 150 q gs gate-to-source charge ??? ??? 44 nc q gd gate-to-drain ("miller") charge ??? ??? 72 t d(on) turn-on delay time ??? 26 ??? t r rise time ??? 94 ??? ns t d(off) turn-off delay time ??? 53 ??? t f fall time ??? 45 ??? c iss input capacitance ??? 3600 ??? c oss output capacitance ??? 380 ??? c rss reverse transfer capacitance ??? 37 ??? c oss output capacitance ??? 4800 ??? pf v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 100 ??? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ??? 220 ??? c oss eff. (er) effective output capacitance ??? 160 ??? (energy related) avalanche characteristics symbol parameter typ. units e as si n gl e p u l se a va l anc h e e ner g y ??? mj i ar a va l anc h e c urrent ??? a e ar r epet i t i ve a va l anc h e e ner g y ??? mj thermal resistance symbol parameter typ. units r jc junction-to-case ??? r cs case-to-sink, flat, greased surface 0.24 c/w r ja junction-to-ambient ??? v ds = v gs , i d = 250a v ds = 500v, v gs = 0v v ds = 400v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 14a v gs = 30v f = 1mhz, open drain conditions v ds = 50v, i d = 14a v gs = -30v i d = 23a v ds = 400v v gs = 10v, see fig. 7 & 15 v dd = 250v i d = 23a r g = 6.0 ? v gs = 10v, see fig. 11a & 11b v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 23 37 max. 410 v gs = 0v,v ds = 0v to 400v 40 max. 0.34 ???

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 1.0 6.0 11.0 16.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 23a

4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 100 200 300 400 500 600 v ds, drain-to-source voltage (v) 0 5 10 15 20 25 e n e r g y ( j ) fig 8. typical source-drain diode forward voltage 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 7. typical gate charge vs. gate-to-source voltage 0 24 48 72 96 120 0 2 5 7 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 23 v = 100v ds v = 250v ds v = 400v ds fig 6. typ. output capacitance stored energy vs. v ds

www.irf.com 5 fig 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d fig 11a. switching time test circuit
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 11b. switching time waveforms fig 9. maximum safe operating area 1 10 100 1000 10 100 1000 10000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms

6 www.irf.com fig 13. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a fig 12. maximum effective transient thermal impedance, junction-to-case 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16a. gate charge test circuit fig 16b. basic gate charge waveform fig 14. maximum avalanche energy vs. drain current fig 15b. unclamped inductive waveforms fig 15a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 150 300 450 600 750 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10a 15a 23a

8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 17. for n-channel hexfet power mosfets

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www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/03

lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m ca s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d mm b - a - 15.90 (.626) 15.30 (.602) - b - 12 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain notes: t his part marking information applies to devices produced after 02/26/2001 example: as s e mb le d on ww 35, 2000 lot code 5657 with assembly this is an irfpe30 in the assembly line "h" 035h logo int e rnat ional rectifier irf pe30 lot code as s e mb l y 56 57 part number dat e code ye ar 0 = 2000 we e k 35 line h lot code ww = we e k yy = ye ar notes : t his part markin g information applies to devices produced before 02/26/2001 or for example: this is an irfpe30 with assembly lot code 3a1q assembly logo rectifier int ernat ional 3a1q irfpe30 part number (yyww) dat e code 9302 parts manufactured i n gb . to-247ac package is not recommended for surface mount application.

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